Bipolar resistive switching effect and mechanism of solution-processed orthorhombic Bi2SiO5 thin films

被引：6

作者：

Chen, Ruqi ^{[1
,2
]}

Hu, Wei ^{[2
,3
]}

Zou, Lilan ^{[2
,4
]}

Ke, Yifu ^{[2
]}

Hao, Aize ^{[2
]}

Bao, Dinghua ^{[2
]}

机构：

[1] South China Agr Univ, Ctr Expt Teaching Common Basic Courses, Guangzhou 510642, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[3] Chongqing Univ, Coll Optoelect Engn, Minist Educ, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China

[4] Guangdong Ocean Univ, Coll Elect & Informat Engn, Dept Phys & Optoelect, Zhanjiang 524088, Peoples R China

来源：

CURRENT APPLIED PHYSICS | 2019年 / 19卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Bi2SiO5 thin films; Resistive switching; Conductive filament; TRANSPARENT; RESISTANCE; FILAMENTS; HYBRID;

D O I：

10.1016/j.cap.2019.05.013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Orthorhombic Bi2SiO5 thin films with dense surface were synthesized by using a chemical solution deposition method. The crystallized films were first utilized to implement resistive memory cells with Pt/Bi2SiO5/Pt sandwich architecture. It exhibited outstanding switching parameters including concentrated distributions of low and high resistance states, uniform switching voltages, cycling endurance, and long retention. Furthermore, the model of formation and rupture of conductive filaments consisted of oxygen vacancies was used to well explain resistive switching behavior. The results revealed that the solution-processed Bi2SiO5 thin film devices have great potential for forefront application in nonvolatile memory.

引用

页码：987 / 991

页数：5

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