High-voltage MOSFET Modeling and Simulation Considerations

被引：0

作者：

Ma, James ^{[1
]}

Yang, Lianfeng ^{[1
]}

机构：

[1] ProPlus Design Solut Inc, San Jose, CA USA

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper gives a brief overview on key aspects of high-voltage (HV) MOSFET modeling and simulation applications in terms of the modeling approaches, model physics, model performance, model extraction and model simulator compatibility, etc. The HV MOSFET compact models under review include the commonly used proprietary models like Cadence level 101 and LDMOS, Synopsys level 66, and the new public-domain model HiSIM_HV.

引用

页码：280 / 283

页数：4

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