Effect Of The Mobility On (I-V) Characteristics Of The MOSFET

被引：0
|
作者：
Benzaoui, Ouassila [1 ,3 ]
Azizi, Cherifa [2 ,3 ]
机构：
[1] 20 August 1955 Univ, Fac Technol, Dept Technol, BP 26,El Hadaiek St, Skikda 21000, Algeria
[2] Larbi Ben Mhidi Univ, Dept Mat Sci, Oum Ei Bouaghi 04000, Algeria
[3] Thin Films & Interfaces Lab, Fac Sci, Dept Phys, Constantine 25000, Algeria
来源：
3RD INTERNATIONAL ADVANCES IN APPLIED PHYSICS AND MATERIALS SCIENCE CONGRESS | 2013年 / 1569卷
关键词：
MOSFET; Mobility; Performance;
D O I：
10.1063/1.4849237
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
MOSFET Transistor was the subject of many studies and research works (electronics, data-processing, telecommunications ...) in order to exploit its interesting and promising characteristics. The aim of this contribution is devoted to the effect of the mobility on the static characteristics I-V of the MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program. The influence of mobility was studied. Obtained results allow us to determine the mobility law in the MOSFET which gives optimal (I-V) characteristics of the component.
引用
收藏
页码：100 / 104
页数：5
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