Effect Of The Mobility On (I-V) Characteristics Of The MOSFET

被引：0

作者：

Benzaoui, Ouassila ^{[1
,3
]}

Azizi, Cherifa ^{[2
,3
]}

机构：

[1] 20 August 1955 Univ, Fac Technol, Dept Technol, BP 26,El Hadaiek St, Skikda 21000, Algeria

[2] Larbi Ben Mhidi Univ, Dept Mat Sci, Oum Ei Bouaghi 04000, Algeria

[3] Thin Films & Interfaces Lab, Fac Sci, Dept Phys, Constantine 25000, Algeria

来源：

3RD INTERNATIONAL ADVANCES IN APPLIED PHYSICS AND MATERIALS SCIENCE CONGRESS | 2013年 / 1569卷

关键词：

MOSFET; Mobility; Performance;

D O I：

10.1063/1.4849237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MOSFET Transistor was the subject of many studies and research works (electronics, data-processing, telecommunications ...) in order to exploit its interesting and promising characteristics. The aim of this contribution is devoted to the effect of the mobility on the static characteristics I-V of the MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program. The influence of mobility was studied. Obtained results allow us to determine the mobility law in the MOSFET which gives optimal (I-V) characteristics of the component.

引用

页码：100 / 104

页数：5

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