Integral isoconversional method for evaluating crystallization parameters of thin films of Ge2Sb2Te5 phase change memory materials

被引：1

作者：

Sherchenkov, A. A. ^{[1
]}

Kozyukhin, S. A. ^{[2
,3
]}

Babich, A. V. ^{[1
]}

Lazarenko, P. I. ^{[1
]}

Vargunin, A. I. ^{[1
]}

机构：

[1] MIET Natl Res Univ Elect Technol, Pl Shokina 1, Moscow 124498, Russia

[2] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Leninskii Pr 31, Moscow 119991, Russia

[3] Tomsk State Univ, Pr Lenina 36, Tomsk 634050, Russia

来源：

INORGANIC MATERIALS | 2017年 / 53卷 / 01期

关键词：

crystallization kinetics; THERMAL-DECOMPOSITION KINETICS; OXALATE;

D O I：

10.1134/S0020168517010150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose a method for evaluating kinetic parameters for the crystallization of thin films of phase change materials. Its basic principle is to jointly use model-free and model isoconversional methods in analyzing differential scanning calorimetry results. Using this method, we have identified the reaction model and evaluated the activation energy for crystallization and pre-exponential factor as a function of the degree of conversion for Ge2Sb2Te5-based thin films.

引用

页码：45 / 49

页数：5

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