Integral isoconversional method for evaluating crystallization parameters of thin films of Ge2Sb2Te5 phase change memory materials

被引：1
|
作者：
Sherchenkov, A. A. [1 ]
Kozyukhin, S. A. [2 ,3 ]
Babich, A. V. [1 ]
Lazarenko, P. I. [1 ]
Vargunin, A. I. [1 ]
机构：
[1] MIET Natl Res Univ Elect Technol, Pl Shokina 1, Moscow 124498, Russia
[2] Russian Acad Sci, Kurnakov Inst Gen & Inorgan Chem, Leninskii Pr 31, Moscow 119991, Russia
[3] Tomsk State Univ, Pr Lenina 36, Tomsk 634050, Russia
来源：
INORGANIC MATERIALS | 2017年 / 53卷 / 01期
关键词：
crystallization kinetics; THERMAL-DECOMPOSITION KINETICS; OXALATE;
D O I：
10.1134/S0020168517010150
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We propose a method for evaluating kinetic parameters for the crystallization of thin films of phase change materials. Its basic principle is to jointly use model-free and model isoconversional methods in analyzing differential scanning calorimetry results. Using this method, we have identified the reaction model and evaluated the activation energy for crystallization and pre-exponential factor as a function of the degree of conversion for Ge2Sb2Te5-based thin films.
引用
收藏
页码：45 / 49
页数：5
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