Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers

被引：61
|
作者：
Smowton, PM [1 ]
Pearce, EJ
Schneider, HC
Chow, WW
Hopkinson, M
机构：
[1] Cardiff Univ, Dept Phys & Astron, Cardiff CF24 3YB, S Glam, Wales
[2] Sandia Natl Labs, Semicond Mat & Device Sci Dept, Albuquerque, NM 87185 USA
[3] Univ Sheffield, EPSRC Cent Facil Semicond 3 5, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 17期
关键词：
D O I：
10.1063/1.1516236
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report measurements of the near-field of broad-area lasers with quantum dot and quantum well active regions designed to emit at 1 mum. The quantum dot devices exhibit less filamentation than comparable quantum well devices, and exhibit a reduction in filamentation as the injection level is increased. This is consistent with a theory that includes the Coulomb coupling between dot and wetting-layer states on a microscopic level. The theory predicts a linewidth enhancement factor from -3 to 1, depending on carrier density and inhomogeneous broadening. (C) 2002 American Institute of Physics.
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收藏
页码：3251 / 3253
页数：3
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