An InGaAs PIN-diode based Broadband Traveling-wave Switch with High-Isolation Characteristics

被引：3
|
作者：
Yang, Jung Gil [1 ]
Kim, Munho [1 ]
Yang, Kyounghoon [1 ]
机构：
[1] Korea Adv Inst Sci & Technol KAIST, Div Elect Engn, Sch Elect Engn & Comp Sci EECS, Taejon, South Korea
来源：
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年
关键词：
InGaAs; PIN diode; artificial transmission line; MMIC; switch;
D O I：
10.1109/ICIPRM.2009.5012480
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-isolation broadband traveling-wave switch using InGaAs PIN diodes is proposed. The circuit design and the analysis of the traveling-wave switch based on an artificial transmission line design are described. The newly proposed MMIC switch provides low insertion loss of less than 3.5 dB and high isolation of better than 39 dB from 15 GHz to 70 GHz. The significantly reduced chip size of 1.0 x 0.8 mm(2) including pads has been achieved by using the meandered microstrip lines.
引用
收藏
页码：207 / 209
页数：3
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