An InGaAs PIN-diode based Broadband Traveling-wave Switch with High-Isolation Characteristics

被引：3

作者：

Yang, Jung Gil ^{[1
]}

Kim, Munho ^{[1
]}

Yang, Kyounghoon ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol KAIST, Div Elect Engn, Sch Elect Engn & Comp Sci EECS, Taejon, South Korea

来源：

2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) | 2009年

关键词：

InGaAs; PIN diode; artificial transmission line; MMIC; switch;

D O I：

10.1109/ICIPRM.2009.5012480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-isolation broadband traveling-wave switch using InGaAs PIN diodes is proposed. The circuit design and the analysis of the traveling-wave switch based on an artificial transmission line design are described. The newly proposed MMIC switch provides low insertion loss of less than 3.5 dB and high isolation of better than 39 dB from 15 GHz to 70 GHz. The significantly reduced chip size of 1.0 x 0.8 mm(2) including pads has been achieved by using the meandered microstrip lines.

引用

页码：207 / 209

页数：3

共 50 条

[1] Broadband InGaAs PIN Traveling-Wave Switch Using a BCB-Based Thin-Film Microstrip Line Structure
Yang, Jung Gil
Yang, Kyounghoon
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (10) : 647 - 649
[2] A 40-110 GHz High-Isolation CMOS Traveling-Wave T/R Switch by Using Parallel Inductor
Lai, Wen-Chian
Chuang, Huey-Ru
2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015,
[3] A High-Isolation Low-Insertion-Loss Filter-Integrated PIN Diode Antenna Switch
Phudpong, P.
Youngthanisara, N.
Kitjaroen, M.
Rattanawan, P.
Siwamogsatham, S.
APMC: 2009 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, 2009, : 1585 - +
[4] Minimal reverse bias voltage of the high-power pin-diode switch
Lebedev, I. V.
Shnitnikov, A. S.
Drozdovskaya, L. M.
Radioelectronics and Communications Systems, 1995, 38 (10):
[5] 77GHz high-isolation coplanar transmit-receive switch using InGaAs/InP PIN diodes
Alekseev, E
Pavlidis, D
Ziegler, V
Berg, M
Dickmann, J
GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998, 1998, : 177 - 180
[6] A package-level implementation of traveling-wave switch using PIN-diodes
Kaleem, Saqib
Rentsch, Sven
Humbla, Stefan
Hein, Matthias
2013 IEEE 22ND CONFERENCE ON ELECTRICAL PERFORMANCE OF ELECTRONIC PACKAGING AND SYSTEMS (EPEPS), 2013, : 179 - 182
[7] A HIGH-ISOLATION SWITCH BASED ON A STANDARD GaAs PROCESS
Zhurbenko, Vitaliy
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2011, 53 (05) : 984 - 987
[8] InGaAs PIN diodes for high-isolation W-band monolithic integrated switching applications
Alekseev, E
Pavlidis, D
Cui, DL
IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS, 1997, : 332 - 340
[9] A programmable high-isolation monolithic millimeter-wave SPST switch
Nam, S
Raynes, DL
Robertson, ID
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 501 - 504
[10] Microwave characteristics of ultra broadband traveling-wave optical modulator with ridge structure
Yang, Yong-Jun
Chen, Fu-Shen
Sun, Bao
Bandaoti Guangdian/Semiconductor Optoelectronics, 2006, 27 (05): : 531 - 533

← 1 2 3 4 5 →