Quantitative analysis of slip defect generation during thermal processes in GaAs wafers

被引：0
|
作者：
Kiyama, M
Takabe, T
Fujita, K
机构：
来源：
COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期
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暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Slip defect generation in (001) GaAs wafers was quantitatively studied by a newly developed wafer heating apparatus, which can precisely control the radial temperature distribution in a wafer. The critical thermal stress for slip defect generation(CSSG) was evaluated as 4.6x10(-2)exp(0.38eV/kT) MPa for the temperature range from 400 to 750 degrees C in 4 '' phi undoped semi-insulating wafers. Si-doped wafers with a carrier concentration of 1-2x10(18)cm(-3) showed about 2 times higher CSSG than undoped ones at 600 degrees C.
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页码：945 / 948
页数：4
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