STRAIN ISSUES ON III-V COMPOUND SEMICONDUCTORS - IMAGING OF STRAIN DISTRIBUTION AND CRYSTAL GROWTH

被引：0

作者：

Fukuzawa, M. ^{[1
]}

Yamada, M. ^{[1
]}

机构：

[1] Kyoto Inst Technol, Grad Sch Sci & Technol, Sakyo Ku, Kyoto 6068585, Japan

来源：

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年

关键词：

wafer breakage; slip generation; residual strain; photoelastisity; polariscope;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strain issues on various commercial-substrates of InP, GaAs and GaP have been investigated by evaluating residual strain distribution with a scanning infrared polariscope (SIRP) and a near-infrared imaging polariscope (NIRIP). Since the thermal history during crystal growth and device-fabrication processes is sensitively reflected in the residual strain distribution, it is useful not only to control the residual strain in the substrates but also to avoid substrate breakage and slip generation.

引用

页码：237 / 242

页数：6

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