Optimization of Crystallization Energy Density for Excimer Laser Annealed Polycrystalline Silicon Thin Film Transistors

被引：0

作者：

Qi, Dongyu ^{[1
]}

Zhang, Dongli ^{[1
]}

Wang, Mingxiang ^{[1
]}

Li, Jianwen ^{[2
]}

机构：

[1] Soochow Univ, Dept Microelect, Suzhou 215006, Peoples R China

[2] Govisionox Optoelect Co Ltd, Suzhou 215300, Peoples R China

来源：

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The excimer laser annealed (ELA) polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated with different laser energy densities (EDs), ranging from 390mJ/cm2 to 510mJ/cm2, are investigated. It is found that, with the increase of the energy density, the grain size grows larger, the lifetime of minority carrier becomes longer, and the activation energy becomes lower. Poly-Si TFTs fabricated with higher energy densities hold better performance including larger field effect mobility (ftrE) and on-state current (ION), and smaller threshold voltage (VTH), subthreshold swing (SS) and off-state current (lorr). The optimized crystallization condition is from 470mJ/cm2 to 510mJ/cm2.

引用

页码：1149 / 1151

页数：3

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