Synthesis and thermoelectric properties of n-type half-Heusler compound VCoSb with valence electron count of 19

被引:72
|
作者
Zhang, Hao [1 ,2 ]
Wang, Yumei [2 ,3 ,4 ]
Huang, Lihong [2 ,3 ,5 ]
Chen, Shuo [2 ,3 ]
Dahal, Heshab [2 ,3 ]
Wang, Dezhi [2 ,3 ]
Ren, Zhifeng [2 ,3 ]
机构
[1] Univ Houston, Dept Chem, Houston, TX 77204 USA
[2] Univ Houston, TcSUH, Houston, TX 77204 USA
[3] Univ Houston, Dept Phys, Houston, TX 77204 USA
[4] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[5] Xihua Univ, Ctr Adv Mat & Energy, Chengdu 610039, Sichuan, Peoples R China
关键词
Thermoelectric; Nanostructure; Half-Heusler; 19 valence electron count; FIGURE-OF-MERIT; CO; TEMPERATURE; ENHANCEMENT; PERFORMANCE; TRANSPORT; METAL;
D O I
10.1016/j.jallcom.2015.09.082
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Half-Heusler compounds with valence electron count (VEC) of 19 were not believed to have good thermoelectric properties because it was theoretically predicted as metallic. However, this work demonstrates experimentally that half-Heusler compound VCoSb we synthesized is in fact a good thermoelectric material. As-made samples show single half-Heusler phase and negative Seebeck coefficient with a peak value around -130 mu V/K at 600 degrees C, which indicates the semiconductor-, not metallic-, like behavior. The VCoSb samples were made by arc-melting the elements to first form ingots, then ball-milling the ingots, and finally hot-pressing the fine powder to form the bulk materials. Different hot-pressing temperatures at 750 degrees C, 800 degrees C, and 900 degrees C were carried out and the results are discussed. A maximum thermoelectric figure-of-merit (ZT) around 0.5 is achieved at 700 degrees C for all the samples. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:321 / 326
页数:6
相关论文
共 50 条
  • [31] International Round-Robin Study of the Thermoelectric Transport Properties of an n-Type Half-Heusler Compound from 300 K to 773 K
    Wang, Hsin
    Bai, Shengqiang
    Chen, Lidong
    Cuenat, Alexander
    Joshi, Giri
    Kleinke, Holger
    Koenig, Jan
    Lee, Hee Woong
    Martin, Joshua
    Oh, Min-Wook
    Porter, Wallace D.
    Ren, Zhifeng
    Salvador, James
    Sharp, Jeff
    Taylor, Patrick
    Thompson, Alan J.
    Tseng, Y. C.
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (11) : 4482 - 4491
  • [32] Weak electron-phonon coupling contributing to enhanced thermoelectric performance in n-type TiCoSb half-Heusler alloys
    Verma, Ajay Kumar
    Jain, Shamma
    Johari, Kishor Kumar
    Candolfi, Christophe
    Lenoir, Bertrand
    Dhakate, S. R.
    Gahtori, Bhasker
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 976
  • [33] Thermoelectric properties of directionally solidified half-Heusler compound NbCoSn alloys
    Kimura, Yoshisato
    Tamura, Yukio
    Kita, Takuji
    APPLIED PHYSICS LETTERS, 2008, 92 (01)
  • [34] Enhanced thermoelectric performance of n-type TiCoSb half-Heusler by Ta doping and Hf alloying
    Rui-Fang Wang
    Shan Li
    Wen-Hua Xue
    Chen Chen
    Yu-Mei Wang
    Xing-Jun Liu
    Qian Zhang
    Rare Metals, 2021, 40 : 40 - 47
  • [35] Enhanced thermoelectric performance of n-type TiCoSb half-Heusler by Ta doping and Hf alloying
    Wang, Rui-Fang
    Li, Shan
    Xue, Wen-Hua
    Chen, Chen
    Wang, Yu-Mei
    Liu, Xing-Jun
    Zhang, Qian
    RARE METALS, 2021, 40 (01) : 40 - 47
  • [36] Optimized thermoelectric performance of the n-type half-Heusler material TiNiSn by substitution and addition of Mn
    Lkhagvasuren, Enkhtaivan
    Ouardi, Siham
    Fecher, Gerhard H.
    Auffermann, Gudrun
    Kreiner, Guido
    Schnelle, Walter
    Felser, Claudia
    AIP ADVANCES, 2017, 7 (04):
  • [37] Thermoelectric properties of p-type half-Heusler compound: Sn-doped ErNiSb
    Kawano, K.
    Kurosaki, K.
    Sekimoto, T.
    Muta, H.
    Yamanaka, S.
    PROCEEDINGS ICT 07: TWENTY-SIXTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, 2008, : 272 - 274
  • [38] Thermoelectric properties of n-type half-Heusler compounds (Hf0.25Zr0.75)1-xNbxNiSn
    Zhang, Hao
    Wang, Yumei
    Dahal, Keshab
    Mao, Jun
    Huang, Lihong
    Zhang, Qinyong
    Ren, Zhifeng
    ACTA MATERIALIA, 2016, 113 : 41 - 47
  • [39] Thermoelectric properties of the half-Heusler compound (Zr,Hf)(Ni,Pd)Sn
    Browning, VM
    Poon, SJ
    Tritt, TM
    Pope, AL
    Bhattacharya, S
    Volkov, P
    Song, JG
    Ponnambalam, V
    Ehrlich, AC
    THERMOELECTRIC MATERIALS 1998 - THE NEXT GENERATION MATERIALS FOR SMALL-SCALE REFRIGERATION AND POWER GENERATION APPLICATIONS, 1999, 545 : 403 - 412
  • [40] Thermoelectric properties of the half-Heusler compound (Zr,Hf)(Ni,Pd)Sn
    Browning, V.M.
    Poon, S.J.
    Tritt, T.M.
    Pope, A.L.
    Bhattacharya, S.
    Volkov, P.
    Song, J.G.
    Ponnambalam, V.
    Ehrlich, A.C.
    Materials Research Society Symposium - Proceedings, 1999, 545 : 403 - 412