Synthesis and thermoelectric properties of n-type half-Heusler compound VCoSb with valence electron count of 19

被引:72
|
作者
Zhang, Hao [1 ,2 ]
Wang, Yumei [2 ,3 ,4 ]
Huang, Lihong [2 ,3 ,5 ]
Chen, Shuo [2 ,3 ]
Dahal, Heshab [2 ,3 ]
Wang, Dezhi [2 ,3 ]
Ren, Zhifeng [2 ,3 ]
机构
[1] Univ Houston, Dept Chem, Houston, TX 77204 USA
[2] Univ Houston, TcSUH, Houston, TX 77204 USA
[3] Univ Houston, Dept Phys, Houston, TX 77204 USA
[4] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
[5] Xihua Univ, Ctr Adv Mat & Energy, Chengdu 610039, Sichuan, Peoples R China
关键词
Thermoelectric; Nanostructure; Half-Heusler; 19 valence electron count; FIGURE-OF-MERIT; CO; TEMPERATURE; ENHANCEMENT; PERFORMANCE; TRANSPORT; METAL;
D O I
10.1016/j.jallcom.2015.09.082
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Half-Heusler compounds with valence electron count (VEC) of 19 were not believed to have good thermoelectric properties because it was theoretically predicted as metallic. However, this work demonstrates experimentally that half-Heusler compound VCoSb we synthesized is in fact a good thermoelectric material. As-made samples show single half-Heusler phase and negative Seebeck coefficient with a peak value around -130 mu V/K at 600 degrees C, which indicates the semiconductor-, not metallic-, like behavior. The VCoSb samples were made by arc-melting the elements to first form ingots, then ball-milling the ingots, and finally hot-pressing the fine powder to form the bulk materials. Different hot-pressing temperatures at 750 degrees C, 800 degrees C, and 900 degrees C were carried out and the results are discussed. A maximum thermoelectric figure-of-merit (ZT) around 0.5 is achieved at 700 degrees C for all the samples. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:321 / 326
页数:6
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