Long-channel field-effect transistor with short-channel transistor properties

被引：0
|
作者：
Karimov, A. V. [1 ]
Yodgorova, D. M. [1 ]
Abdulkhaev, O. A. [1 ]
机构：
[1] Uzbek Acad Sci, Phys Tech Inst, Sci Prod Assoc Phys Sun, Tashkent 100084, Uzbekistan
来源：
SEMICONDUCTORS | 2014年 / 48卷 / 04期
关键词：
Transient Response; Carrier Mobility; Field Effect Transistor; Impurity Distribution; Channel Thickness;
D O I：
10.1134/S1063782614040137
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The typical parameters of samples of long-channel field-effect transistors and the results of measurement of their functional characteristics are presented. The possible distributions of the carrier mobility over the channel thickness are considered. The current-voltage characteristics of long-channel field-effect transistors with an arbitrary doping profile and carrier-mobility gradient are theoretically analyzed taking into account carrier velocity saturation.
引用
收藏
页码：481 / 486
页数：6
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