Broadband compact models for transformers integrated on conductive silicon substrates

被引：11

作者：

Kamgaing, T ^{[1
]}

Petras, M ^{[1
]}

Miller, M ^{[1
]}

机构：

[1] MOtorola SPS, Microwave & Mixed Signal Technol Lab, Tempe, AZ 85284 USA

来源：

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年

关键词：

transformers; multiport circuits; passive circuits; baluns; MMICs;

D O I：

10.1109/RFIC.2004.1320652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband scalable lumped-element model for multiport transformers integrated on silicon substrate is presented. The model is based on a pi-T network for the primary and secondary coils and utilizes only frequency-independent elements to model the frequency-dependent resistive losses. Four-port S-parameters are measured for multiport transformers up to 15 GHz and accurate compact models extracted up to 4 GHz, which covers the fundamental frequency bands and their second harmonics of interest for European and US GSM/EGSM and DCS/PCS cellular bands. Good agreement is obtained between modeled and measured transformer performance attributes.

引用

页码：457 / 460

页数：4

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