High growth rates of AlN and AlGaN on 8" silicon wafer using metal-organic vapor phase epitaxy reactor

被引：13

作者：

Ubukata, Akinori ^{[1
]}

Yano, Yoshiki ^{[1
]}

Yamaoka, Yuya ^{[1
]}

Kitamura, Yuichiro ^{[1
]}

Tabuchi, Toshiya ^{[1
]}

Matsumoto, Koh ^{[2
]}

机构：

[1] Taiyo Nippon Sanso Corp, 10 Ohkubo, Tsukuba, Ibaraki 3002611, Japan

[2] TN EMC Ltd, Tokyo 2060001, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 | 2013年 / 10卷 / 11期

关键词：

AlN; mass transfer; metal-organic vapor phase epitaxy; SURFACE-MORPHOLOGY; HEMT; MOVPE; GAN;

D O I：

10.1002/pssc.201300255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a large-scale metal-organic vapor phase epitaxy (MOVPE) reactor. The growth rates of AlN and AlGaN were compared with those calculated using the parasitic chemical reaction model. The calculated results were in good agreement with the experimental results over the entire 8" wafer. To experimentally investi-gate the extent of the gas-phase prereaction between the precursors and ammonia, the results of epitaxy were compared with those for a 6"-type reactor. The growth of AlN and AlGaN at relatively high rates without any significant gas-phase prereaction was demonstrated.

引用

页码：1353 / 1356

页数：4

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