Low-temperature, catalyzed growth of indium nitride fibers from azido-indium precursors

被引：0

作者：

Dingman, SD

Rath, NP

Markowitz, PD

Gibbons, PC

Buhro, WE ^{[1
]}

机构：

[1] Washington Univ, Dept Chem, St Louis, MO 63130 USA

[2] Univ Missouri, Dept Chem, St Louis, MO 63121 USA

[3] Univ Missouri, Ctr Mol Elect, St Louis, MO 63121 USA

[4] Washington Univ, Dept Phys, St Louis, MO 63130 USA

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2000年 / 39卷 / 08期

关键词：

azides; crystal growth; indium; nanostructures; nitrides;

D O I：

10.1002/(SICI)1521-3773(20000417)39:8<1470::AID-ANIE1470>3.0.CO;2-L

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

New blue/violet laser diodes and LEDs need InN-containing alloys to provide the light-emitting constituents, but InN typically requires crystals growth temperatures (427-550 °C) commensurate with its decomposition. A new method allows InN synthesis as a fiber at only 203°C. This method suggests new approaches to produce thermally unstable materials.

引用

页码：1470 / +

页数：4

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