2.7-μm GaSb-Based Diode Lasers With Quinary Waveguide

被引：8
|
作者：
Chen, J. [1 ]
Kipshidze, G. [1 ]
Shterengas, L. [1 ]
Hosoda, T. [1 ]
Wang, Y. [1 ]
Donetsky, D. [1 ]
Belenky, G. [1 ]
机构：
[1] SUNY Stony Brook, Stony Brook, NY 11794 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 16期
基金：
美国国家科学基金会;
关键词：
Laser; power laser; semiconductor laser; MU-M; POWER; OPERATION;
D O I：
10.1109/LPT.2009.2023224
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 mu m with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm(2) per QW and slope efficiency of 150 mW/A were demonstrated at 16 degrees C.
引用
收藏
页码：1112 / 1114
页数：3
相关论文
共 50 条
  • [21] Cascade pumping of GaSb-based type-I quantum well diode lasers
    Shterengas, L.
    Liang, R.
    Kipshidze, G.
    Hosoda, T.
    Suchalkin, S.
    Belenky, G.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XIII, 2014, 9002
  • [22] Amplification of GaSb-Based Diode Lasers in an Erbium-Doped Fluoride Fibre Amplifier
    Chichkov, Nikolai B.
    Yadav, Amit
    Joulain, Franck
    Cozic, Solenn
    Smirnov, Semyon V.
    Shterengas, Leon
    Scheuermann, Julian
    Weih, Robert
    Koeth, Johannes
    Hofling, Sven
    Hinze, Ulf
    Poulain, Samuel
    Rafailov, Edik U.
    IEEE PHOTONICS JOURNAL, 2023, 15 (01):
  • [23] Short-Pulse High-Power Operation of GaSb-Based Diode Lasers
    Mueller, Markus
    Rattunde, Marcel
    Kaufel, Gudrun
    Schmitz, Johannes
    Wagner, Joachim
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (23) : 1770 - 1772
  • [24] GaSb-based Narrow Ridge Waveguide Laser Diode with Single Transverse Mode Operation
    Wang, Tian-fang
    Yang, Cheng-ao
    Chen, Yi-hang
    Zhang, Yi
    Shang, Jin-ming
    Zhang, Yu
    Xu, Ying-qiang
    Niu, Zhi-chuan
    TWELFTH INTERNATIONAL CONFERENCE ON INFORMATION OPTICS AND PHOTONICS (CIOP 2021), 2021, 12057
  • [25] External cavity GaSb-based cascade diode lasers with tuning range of 280 nm centered near 3.13 μm
    Wang, Meng
    Feng, Tao
    Hosoda, Takashi
    Kipshidze, Gela
    Jiang, Jiang
    Shterengas, Leon
    Belenky, Gregory
    2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2018,
  • [26] GaSb-based tapered diode lasers at 1.93 μm with 1.5-W nearly diffraction-limited power
    Pfahler, C
    Kaufel, G
    Kelemen, MT
    Mikulla, M
    Rattunde, M
    Schmitz, J
    Wagner, J
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (5-8) : 758 - 760
  • [27] High-power laterally coupled distributed-feedback GaSb-based diode lasers at 2 μm wavelength
    Forouhar, Siamak
    Briggs, Ryan M.
    Frez, Clifford
    Franz, Kale J.
    Ksendzov, Alexander
    APPLIED PHYSICS LETTERS, 2012, 100 (03)
  • [28] Cascade Pumping of 1.9-3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers
    Shterengas, Leon
    Kipshidze, Gela
    Hosoda, Takashi
    Liang, Rui
    Feng, Tao
    Wang, Meng
    Stein, Aaron
    Belenky, Gregory
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2017, 23 (06)
  • [29] GaSb-based quantum wells 2 μm high power laser diode
    Liao, Yongping
    Zhang, Yu
    Xing, Junliang
    Yang, Chengao
    Wei, Sihang
    Hao, Hongyue
    Xu, Yingqiang
    Niu, Zhichuan
    Zhongguo Jiguang/Chinese Journal of Lasers, 2015, 42
  • [30] Continuous wave room temperature operation of the 2 μm GaSb-based photonic crystal surface emitting diode lasers
    Shterengas, Leon
    Liu, Ruiyan
    Stein, Aaron
    Kipshidze, Gela
    Lee, Won Jae
    Belenky, Gregory
    APPLIED PHYSICS LETTERS, 2023, 122 (13)
12345