2.7-μm GaSb-Based Diode Lasers With Quinary Waveguide

被引：8
|
作者：
Chen, J. [1 ]
Kipshidze, G. [1 ]
Shterengas, L. [1 ]
Hosoda, T. [1 ]
Wang, Y. [1 ]
Donetsky, D. [1 ]
Belenky, G. [1 ]
机构：
[1] SUNY Stony Brook, Stony Brook, NY 11794 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 16期
基金：
美国国家科学基金会;
关键词：
Laser; power laser; semiconductor laser; MU-M; POWER; OPERATION;
D O I：
10.1109/LPT.2009.2023224
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Type-I double-quantum-well (QW) GaSb-based diode lasers operating at 2.7 mu m with room-temperature continuous-wave (CW) output power of 600 mW and peak power-conversion efficiency of 10% were designed and fabricated. The devices employed 470-nm-wide AlGaInAsSb waveguide optimized for improved device differential gain. CW threshold current density about 100 A/cm(2) per QW and slope efficiency of 150 mW/A were demonstrated at 16 degrees C.
引用
收藏
页码：1112 / 1114
页数：3
相关论文
共 50 条
  • [1] Passively Mode-Locked 2.7 and 3.2 μm GaSb-Based Cascade Diode Lasers
    Feng, Tao
    Shterengase, Leon
    Hosoda, Takashi
    Kipshidze, Gela
    Belyanin, Alexey
    Teng, Chu C.
    Westberg, Jonas
    Wysocki, Gerard
    Belenky, Gregory
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2020, 38 (07) : 1895 - 1899
  • [2] GaSb-based 2.7 μm laser diode with GaAs top cladding
    Bate, Timothy
    Lu, Chunte
    Palomino, Robert
    Yang, Chi
    Newell, Timothy C.
    Sanh Luong
    Kaspi, Ron
    2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2018,
  • [3] 2.7 μm GaSb-based distributed feedback lasers with laterally coupled gratings
    Han, Shixian
    Yan, Jinyi
    Cao, Chun-fang
    Yang, Jing
    Zhao, Xuyi
    Yu, Wenfu
    Antian, Du
    Liu, Ruotao
    Hu, Wenxin
    Chen, Yuanyu
    Wang, Hailong
    Gong, Qian
    PHYSICA SCRIPTA, 2022, 97 (12)
  • [4] Low-Threshold Strained Quantum-Well GaSb-Based Lasers Emitting in the 2.5-to 2.7-μm Wavelength Range
    Kashani-Shirazi, Kaveh
    Vizbaras, Kristijonas
    Bachmann, Alexander
    Arafin, Shamsul
    Amann, Markus-Christian
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (16) : 1106 - 1108
  • [5] Passive Mode-Locking of 3.25 μm GaSb-Based Cascade Diode Lasers
    Feng, Tao
    Shterengas, Leon
    Hosoda, Takashi
    Belyanin, Alexey
    Kipshidze, Gela
    ACS PHOTONICS, 2018, 5 (12): : 4978 - 4985
  • [6] GaSb-Based Diode Lasers With Asymmetric Separate Confinement Heterostructure
    Liang, Rui
    Hosoda, Takashi
    Kipshidze, Gela
    Shterengas, Leon
    Belenky, Gregory
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (10) : 925 - 928
  • [7] 2.75-μm Mid-Infrared GaSb-Based Quantum Well Lasers with Quinary Alloy Barrier
    Yuan Ye
    Chai Xiaoli
    Yang Chengao
    Zhang Yi
    Shang Jinming
    Xie Shengwen
    Li Sensen
    Zhang Yu
    Xu Yingqiang
    Su Xingliang
    Niu Zhichuan
    CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2020, 47 (07):
  • [8] GaSb-based diode lasers with asymmetric coupled quantum wells
    Jiang, Jiang
    Shterengas, Leon
    Hosoda, Takashi
    Belyanin, Alexei
    Kipshidze, Gela
    Belenky, Gregory
    APPLIED PHYSICS LETTERS, 2018, 113 (07)
  • [9] Aluminum-based contacts for use in GaSb-based diode lasers
    Thanh-Nam Tran
    Patra, Saroj Kumar
    Breivik, Magnus
    Fimland, Bjorn-Ove
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (06):
  • [10] Monolithic tunable GaSb-based lasers at 3.3 μm
    Naehle, L.
    Zimmermann, C.
    Belahsene, S.
    Fischer, M.
    Boissier, G.
    Grech, P.
    Narcy, G.
    Lundqvist, S.
    Rouillard, Y.
    Koeth, J.
    Kamp, M.
    Worschech, L.
    ELECTRONICS LETTERS, 2011, 47 (19) : 1092 - U80
12345