UV Enhanced Indium-Doped ZnO Nanorod Field Emitter

被引：13

作者：

Chang, Shoou-Jinn ^{[1
,2
]}

Duan, Bi-Gui ^{[1
,2
]}

Liu, Chung-Wei ^{[1
,2
]}

Hsiao, Chih-Hung ^{[1
,2
]}

Young, Sheng-Joue ^{[3
]}

Huang, Chien-Sheng ^{[4
,5
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[3] Natl Formosa Univ, Dept Elect Engn, Yunlin 632, Taiwan

[4] Natl Yunlin Univ Sci & Technol, Dept Elect Engn, Touliu 64002, Taiwan

[5] Natl Yunlin Univ Sci & Technol, Inst Elect & Optoelect Engn, Touliu 64002, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 11期

关键词：

Field emission; hydrothermal; indium-doped ZnO nanorods; OPTICAL-PROPERTIES; EMISSION; NANOWIRES; PHOTOLUMINESCENCE; GROWTH; ARRAYS; MECHANISMS; GAN;

D O I：

10.1109/TED.2013.2280910

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, pure and indium-doped ZnO nanorods were prepared by the hydrothermal method. Their morphology and structure were characterized by field emission scanning electron microscopy, high-resolution transmission electron microscope, X-ray diffraction, and photoluminescence spectroscopy, which demonstrated the structure and crystalline quality of the In-doped ZnO nanorods. Doping with indium reduced turn-on field from 5.8 to 0.8 V/mu m. The field enhancement factors, beta, of the pure and indium-doped ZnO naonrods, estimated from the slopes of the Fowler-Nordhein plot were around 923 and 9818.

引用

页码：3901 / 3906

页数：6

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