pH ISFET sensor with PVTA compensation

被引：2

作者：

Carrillo-Martinez, L. A. ^{[1
]}

Espinosa Flores-Verdad, G. ^{[1
]}

Perez, B. M. ^{[1
]}

Molina Reyes, J. ^{[1
]}

机构：

[1] Inst Nacl Astrofis Opt & Electr, Dept Elect, Cholula, Mexico

来源：

ELECTRONICS LETTERS | 2016年 / 52卷 / 01期

关键词：

D O I：

10.1049/el.2015.2573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sensory system performance and variability depend on the compensation degree against fabrication process, voltage, temperature and ageing (PVTA) variations. A pH ion sensitive field-effect transistor sensor with PVTA compensation is presented; stages for calibration and sensitivity adjustment were also included. To validate its performance, the proposed sensor was compared with a non-compensated sensor; the results showed that PVTA variations were reduced by 81.50% for fabrication process and ageing, 87.91% for voltage and 80.30% for temperature. The maximum resolution achieved was 833.33 mV/pH.

引用

页码：15 / 16

页数：2

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