Growth of high-quality ZnTe layers by MOVPE

被引：15
|
作者：
Gheyas, SI
Hirano, S
Nishio, M
Ogawa, H
机构：
[1] SAGA UNIV, DEPT ELECT ENGN, FAC SCI & ENGN, SAGA 840, JAPAN
[2] INST MOL SCI, OKAZAKI, AICHI 444, JAPAN
来源：
APPLIED SURFACE SCIENCE | 1996年 / 100卷
关键词：
D O I：
10.1016/0169-4332(96)00356-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effects of substrate temperature and transport rate of source materials (dimethylzinc and diethyltellurium) on the growth rate and photoluminescence properties of ZnTe layers grown on the ZnTe (100) substrate by atmospheric pressure MOVPE have been investigated. Strong free exciton emission and Y bands appear predominantly in films grown under low transport rate(e.g., 10-15 mu mol/min) and moderate temperature (e.g., 380 degrees C).
引用
收藏
页码：647 / 651
页数：5
相关论文
共 50 条
  • [21] Growth of high-quality Ge epitaxial layers on Si (100)
    Luo, G. (luogl@faculty.nctu.edu.tw), 1600, Japan Society of Applied Physics (42):
  • [22] GROWTH AND CHARACTERIZATION OF HIGH-QUALITY ALGAINAS LPE LAYERS ON INP
    YAMAZAKI, S
    KOBAYASHI, M
    SUGAWARA, M
    NAKAJIMA, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C404 - C404
  • [23] Growth of high-quality Ge epitaxial layers on Si(100)
    Luo, GL
    Yang, TH
    Chang, EY
    Chang, CY
    Chao, KA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (5B): : L517 - L519
  • [24] GROWTH OF HIGH-QUALITY ZnSe LAYERS IN HYDROGEN PLASMA.
    Matsumoto, Takashi
    Yoshida, Shigeki
    Ishida, Tetsuro
    1600, (25):
  • [25] THE GROWTH OF HIGH-QUALITY CDXHG1-XTE BY MOVPE ONTO GAAS SUBSTRATES
    GIESS, J
    GOUGH, JS
    IRVINE, SJC
    BLACKMORE, GW
    MULLIN, JB
    ROYLE, A
    JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 120 - 125
  • [26] MOVPE GROWTH OF HIGH-QUALITY SELECTIVELY DOPED N-INGAP GAAS HETEROSTRUCTURES
    TAKECHI, M
    OHORI, T
    TAKIKAWA, M
    KOMENO, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (09) : C452 - C452
  • [27] Growth of high quality GaN and AlxGa1-xN layers by MOVPE technique
    Paszkiewicz, R
    Korbutowicz, R
    Radziewicz, D
    Panek, M
    Paszkiewicz, B
    Kozlowski, J
    Boratynski, B
    Tlaczala, M
    EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 21 - 24
  • [28] GROWTH AND PHOTOLUMINESCENCE INVESTIGATIONS OF PHOSPHORUS-DOPED AND IODINE-DOPED MOVPE ZNTE LAYERS
    WOLF, K
    WORZ, M
    WAGNER, HP
    KUHN, W
    NAUMOV, A
    GEBHARDT, W
    JOURNAL OF CRYSTAL GROWTH, 1993, 126 (04) : 643 - 650
  • [29] Phase diagrams for the MOVPE growth of ZnTe and ZnSeTe
    Duan, SK
    Lu, DC
    JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 514 - 517
  • [30] MOVPE growth and characterisation of ZnTe epilayers on (100)ZnTe:P substrates
    Lovergine, N
    Traversa, M
    Prete, P
    Yoshino, K
    Ozeki, M
    Pentimalli, M
    Tapfer, L
    Mancini, AM
    JOURNAL OF CRYSTAL GROWTH, 2003, 248 : 37 - 42
12345