Growth of high-quality ZnTe layers by MOVPE

被引：15
|
作者：
Gheyas, SI
Hirano, S
Nishio, M
Ogawa, H
机构：
[1] SAGA UNIV, DEPT ELECT ENGN, FAC SCI & ENGN, SAGA 840, JAPAN
[2] INST MOL SCI, OKAZAKI, AICHI 444, JAPAN
来源：
APPLIED SURFACE SCIENCE | 1996年 / 100卷
关键词：
D O I：
10.1016/0169-4332(96)00356-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effects of substrate temperature and transport rate of source materials (dimethylzinc and diethyltellurium) on the growth rate and photoluminescence properties of ZnTe layers grown on the ZnTe (100) substrate by atmospheric pressure MOVPE have been investigated. Strong free exciton emission and Y bands appear predominantly in films grown under low transport rate(e.g., 10-15 mu mol/min) and moderate temperature (e.g., 380 degrees C).
引用
收藏
页码：647 / 651
页数：5
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