A surface potential-based DC model considering interface trap states for 4H-SiC power MOSFETs

被引：0

作者：

Liu, Yuan ^{[1
]}

Peng, Zijuan ^{[2
]}

Lu, Yudong ^{[3
]}

Wang, Bingqi ^{[2
]}

Deng, Wanling ^{[2
]}

机构：

[1] Guangdong Univ Technol, Sch Automat, Guangzhou 510006, Peoples R China

[2] Jinan Univ, Dept Elect Engn, Guangzhou 510630, Peoples R China

[3] Dept Guangzhou GRG Metrol & Test Co Ltd, Guangzhou 510656, Peoples R China

来源：

AIP ADVANCES | 2020年 / 10卷 / 09期

关键词：

PHYSICS; CHARGE;

D O I：

10.1063/5.0023293

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, a surface potential-based physical model is described for the DC characteristics of 4H-silicon carbide power metal-oxide- semiconductor field-effect transistors. The proposed scheme is based on the charge-sheet model and accounts for the interface charges, which include the fixed oxide charges and the interface-trapped charges. An analytical and effective approximation of the surface potential as a function of gate voltage is proposed, which can serve as a basis for the surface potential-based DC model. Furthermore, it has been demonstrated that the measured I-V characteristics are well reproduced by the proposed drain current model in a wide range of bias voltages and temperatures. (C) 2020 Author(s).

引用

页数：6

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