A surface potential-based DC model considering interface trap states for 4H-SiC power MOSFETs

被引：0
|
作者：
Liu, Yuan [1 ]
Peng, Zijuan [2 ]
Lu, Yudong [3 ]
Wang, Bingqi [2 ]
Deng, Wanling [2 ]
机构：
[1] Guangdong Univ Technol, Sch Automat, Guangzhou 510006, Peoples R China
[2] Jinan Univ, Dept Elect Engn, Guangzhou 510630, Peoples R China
[3] Dept Guangzhou GRG Metrol & Test Co Ltd, Guangzhou 510656, Peoples R China
来源：
AIP ADVANCES | 2020年 / 10卷 / 09期
关键词：
PHYSICS; CHARGE;
D O I：
10.1063/5.0023293
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, a surface potential-based physical model is described for the DC characteristics of 4H-silicon carbide power metal-oxide- semiconductor field-effect transistors. The proposed scheme is based on the charge-sheet model and accounts for the interface charges, which include the fixed oxide charges and the interface-trapped charges. An analytical and effective approximation of the surface potential as a function of gate voltage is proposed, which can serve as a basis for the surface potential-based DC model. Furthermore, it has been demonstrated that the measured I-V characteristics are well reproduced by the proposed drain current model in a wide range of bias voltages and temperatures. (C) 2020 Author(s).
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Modified Interface State Charge Model for 4H-SiC Power MOSFETs
    Hisamoto, Digh
    Yoshimoto, Hiroyuki
    Tega, Naoki
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (05) : 490 - 492
  • [2] Effects of Quantum Confinement on Interface Trap Occupation in 4H-SiC MOSFETs
    Potbhare, Siddharth
    Akturk, Akin
    Goldsman, Neil
    Lelis, Aivars
    SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2008, : 181 - +
  • [3] 4H-SiC RF power MOSFETs
    Alok, D
    Arnold, E
    Egloff, R
    Barone, J
    Murphy, J
    Conrad, R
    Burke, J
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (12) : 577 - 578
  • [4] Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs
    Sakai, Atsushi
    Eikyu, Katsumi
    Sonoda, Kenichiro
    Hisada, Kenichi
    Arai, Koichi
    Yamamoto, Yoichi
    Tanizawa, Motoaki
    Yamaguchi, Yasuo
    2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2015, : 64 - 67
  • [5] Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs
    Yu, Susanna
    White, Marvin H.
    Agarwal, Anant K.
    IEEE ACCESS, 2021, 9 (09): : 149118 - 149124
  • [6] On the Evaluation of Gate Dielectrics for 4H-SiC Based Power MOSFETs
    Nawaz, Muhammad
    ACTIVE AND PASSIVE ELECTRONIC COMPONENTS, 2015, 2015
  • [7] Evaluating 4H-SiC Based Commercial MOSFETs Power Modules
    Nawaz, Muhammad
    Chen, Nan
    2015 IEEE 11TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (PEDS 2015), 2015, : 462 - 466
  • [8] Large area 4H-SiC power MOSFETs
    Agarwal, A
    Ryu, SH
    Das, M
    Lipkin, L
    Palmour, J
    Saks, N
    ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2001, : 183 - 186
  • [9] 1400 V 4H-SiC power MOSFETs
    Agarwal, A.K.
    Casady, J.B.
    Rowland, L.B.
    Valek, W.F.
    Brandt, C.D.
    Materials Science Forum, 1998, 264-268 (pt 2): : 989 - 992
  • [10] Transient characterization of interface traps in 4H-SiC MOSFETs
    Potbhare, S.
    Goldsman, N.
    Pennington, G.
    Akturk, A.
    Lelis, A.
    SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007, 2007, : 177 - +
12345