Resonant Auger spectroscopy study of charge transfer phenomena in N 1s core-excited acetonitrile adsorbates on Si(001)-2 x 1

被引:4
|
作者
Gallet, J. -J
Bournel, F.
Carniato, S.
Dufour, G.
Rochet, F. [1 ]
Rangan, S.
Sirotti, F.
机构
[1] Univ Paris 06, Lab Chim Phys Mat & Rayonnement, F-75231 Paris 05, France
[2] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[3] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France
关键词
silicon; organo-functionalization of surfaces; NEXAFS; Auger spectroscopy; synchrotron radiation photoelectron spectroscopy; excitons and excited surface states; femtosecond electron transfer; density functional calculations;
D O I
10.1016/j.susc.2006.10.022
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Acetonitrile (CH3CN) adsorbs on Si(001)-2 x 1 at room temperature under two forms, a cycloaddition-like adduct (Si-C=N-Si) and a pendent cyano (Si-CH2-C-N) resulting from the decomposition of the molecule. Resonant Auger spectroscopy has been used to study the excited-state-dependent electron transfer from the N Is core-excited molecular adsorbate to the silicon substrate, using the core-hole lifetime (similar to 6 fs) as an internal clock. It is shown that the pi(*)(C=N) NEXAFS state lies within the silicon bandgap because of a core-excitonic effect. Therefore no charge transfer of the excited electron to the substrate is observed. On the other hand the pi(*)(C=N) NEXAFS state is placed within the silicon conduction band. Excitation to this orbital leads to valence/Auger spectra in which both resonant and normal Auger contributions are observed. Therefore there is evidence for a charge transfer from the pendent C N to the silicon surface, on a timescale estimated to tens of femtoseconds. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:552 / 561
页数:10
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