Demonstration of large active area AlGaN solar-blind Schottky photodiodes with low dark current

被引：5

作者：

Jiang, H. ^{[1
]}

Egawa, T. ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nano Devices & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

ELECTRONICS LETTERS | 2006年 / 42卷 / 19期

关键词：

D O I：

10.1049/el:20061405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solar-blind AlGaN Schottky photodiodes with a large active area of 2 x 2 mm have been fabricated on a AIN/sapphire template. The resulting devices show dark current density as low as 6.6 x 10(-11) A at -5 V bias. A zero-bias peak responsivity of 38 mA/W was obtained at 260 nm, corresponding to. an estimated detectivity of 1.2 x 10(14) cm Hz(1/2) W-1.

引用

页码：1120 / 1122

页数：3

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