Demonstration of large active area AlGaN solar-blind Schottky photodiodes with low dark current

被引：5
|
作者：
Jiang, H. [1 ]
Egawa, T. [1 ]
机构：
[1] Nagoya Inst Technol, Res Ctr Nano Devices & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 19期
关键词：
D O I：
10.1049/el:20061405
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Solar-blind AlGaN Schottky photodiodes with a large active area of 2 x 2 mm have been fabricated on a AIN/sapphire template. The resulting devices show dark current density as low as 6.6 x 10(-11) A at -5 V bias. A zero-bias peak responsivity of 38 mA/W was obtained at 260 nm, corresponding to. an estimated detectivity of 1.2 x 10(14) cm Hz(1/2) W-1.
引用
收藏
页码：1120 / 1122
页数：3
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