Structural Properties of Multiferroic BiFeO3 under Hydrostatic Pressure

被引:63
|
作者
Belik, Alexel A. [1 ]
Yusa, Hitoshi [2 ]
Hirao, Naohisa [3 ]
Ohishi, Yasuo [3 ]
Takayama-Muromachi, Eiji [1 ]
机构
[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitect MANA, Tsukuba, Ibaraki 3050044, Japan
[2] Natl Inst Mat Sci, ANML, Tsukuba, Ibaraki 3050044, Japan
[3] Synchrotron Radiat Res Inst JASRI, Sayo, Hyogo 6795198, Japan
关键词
PHASE-TRANSITIONS; CRYSTAL; STATE; OXIDE;
D O I
10.1021/cm901008t
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-pressure structural properties of multiferroic perovskite-type BiFeO3 have been investigated by high-resolution synchrotron X-ray powder diffraction at room temperature up to 9.7 GPa. BiFeO3 shows rather complicated structural behavior. The ambient-pressure ferroelectric R3c phase transforms to an orthorhombic phase OI at around 4 GPa during compression. The OI phase is characterized by a supestructure root 2a(p) x 3 root 2a(p) x a(p), where a(p) is the parameter of the Cubic perovskite subcell (a = 5.4939(4) angstrom, b = 16.6896(9) angstrom, c = 3.8728(2) angstrom at 4.9 GPa). The OI phase transforms to an orthorhombic phase Oil at around 7 GPa. The Oil phase is characterized. by a superstructure root 2a(p) x 3 root 2a(p) x 2a(p) (a = 5.5021(3) angstrom, b = 16.2439(11) angstrom, c = 7.6960(4) angstrom at 9.7 Gila). During decompression, significant hysteretic behavior was found. The OII phase was stable down to about 3 GPa, The OII phase then transforms to an orthorhombic phase OIII that is characterized by a superstructure root 2a(p) x 2 root 2a(p) x 2a(p) (a = 5.5617(6) angstrom, b = 11.2153(10) angstrom, c = 7.7788(7) angstrom at 2.2 GPa). The R3c phase appeared below about I GPa; however, even at ambient pressure, traces of the OIII phase remained. The OIII phase seems to be isostructural with antiferroelectric PbZrO3 (space group Pbam).
引用
收藏
页码:3400 / 3405
页数:6
相关论文
共 50 条
  • [41] Multiferroic skyrmions in BiFeO3
    Li, Z.
    Chirac, T.
    Tranchida, J.
    Garcia, V.
    Fusil, S.
    Jacques, V.
    Chauleau, J. -Y.
    Viret, M.
    PHYSICAL REVIEW RESEARCH, 2023, 5 (04):
  • [42] Stabilization of Ferromagnetism in BiFeO3:Ho at Hydrostatic Pressure
    Arslanov, T. R.
    Kallaev, S. N.
    Reznichenko, L. A.
    JETP LETTERS, 2018, 107 (08) : 477 - 482
  • [43] Driving Spin Excitations by Hydrostatic Pressure in BiFeO3
    Buhot, J.
    Toulouse, C.
    Gallais, Y.
    Sacuto, A.
    de Sousa, R.
    Wang, D.
    Bellaiche, L.
    Bibes, M.
    Barthelemy, A.
    Forget, A.
    Colson, D.
    Cazayous, M.
    Measson, M-A.
    PHYSICAL REVIEW LETTERS, 2015, 115 (26)
  • [44] Stabilization of Ferromagnetism in BiFeO3:Ho at Hydrostatic Pressure
    T. R. Arslanov
    S. N. Kallaev
    L. A. Reznichenko
    JETP Letters, 2018, 107 : 477 - 482
  • [45] Microstructures and Multiferroic Properties of Electrospun BiFeO3 Nanofibers
    Song, Jong-Han
    Nam, Joong-Hee
    Cho, Jung-Ho
    Kim, Byung-Ik
    Chun, Myoung-Pyo
    Choi, Duck-Kyun
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 59 (03) : 2308 - 2312
  • [46] Multiferroic properties of Y-doped BiFeO3
    Luo, Lirong
    Wei, Wei
    Yuan, Xueyong
    Shen, Kai
    Xu, Mingxiang
    Xu, Qingyu
    JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 540 : 36 - 38
  • [47] Electrical and Magnetic Properties of BiFeO3 Multiferroic Ceramics
    Roy, M.
    Jangid, Sumit
    Barbar, Shiv Kumar
    Dave, Praniti
    JOURNAL OF MAGNETICS, 2009, 14 (02) : 62 - 65
  • [48] Effect of Praseodymium on Electrical Properties of BiFeO3 Multiferroic
    Samita Pattanayak
    R. N. P. Choudhary
    Piyush R. Das
    Journal of Electronic Materials, 2014, 43 : 470 - 478
  • [49] Multiferroic properties of Mn-substituted BiFeO3
    Manpreet Singh
    Pooja Kumari
    Kamal Kishore
    K. C. Verma
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 4937 - 4948
  • [50] Multiferroic properties of Mn-substituted BiFeO3
    Singh, Manpreet
    Kumari, Pooja
    Kishore, Kamal
    Verma, K. C.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (04) : 4937 - 4948