Advanced etch tool for high etch rate deep reactive ion etching in silicon micromachining production environment

被引：0

作者：

Schilp, A ^{[1
]}

Hausner, M ^{[1
]}

Puech, M ^{[1
]}

Launay, N ^{[1
]}

Karagoezoglu, H ^{[1
]}

Laermer, F ^{[1
]}

机构：

[1] Alcatel Vacuum Technol France, F-74009 Annecy, France

来源：

ADVANCED MICROSYSTEMS FOR AUTOMOTIVE APPLICATIONS 2001 | 2001年

关键词：

high-rate silicon deep reactive ion etching; ICP; MEMS; prototype;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on first results of a new joint project for high-rate silicon deep reactive ion etching for MEMS. The process technology underlying this prototype assessment is the so-called Bosch process [1, 2]. This process is nowadays widely used on inductively coupled plasma equipment for the deep reactive ion etching technology in silicon micromachining. The periodic change of different gases for etching (SF6) and passivation (C4F8) can lead to very high aspect ratios and very high etch rates.

引用

页码：229 / 236

页数：8

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