Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlOx/Pt RRAM device

被引：36
|
作者：
Yuan, Fang [1 ,2 ]
Zhang, Zhigang [1 ]
Wang, Jer-Chyi [2 ]
Pan, Liyang [1 ]
Xu, Jun [1 ]
Lai, Chao-Sung [2 ]
机构：
[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China
[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan
来源：
NANOSCALE RESEARCH LETTERS | 2014年 / 9卷
基金：
中国国家自然科学基金;
关键词：
Total ionizing dose (TID) effects; gamma ray radiation; RRAM; Hybrid filament model; Filament; Radiation-induced holes; DISPLACEMENT DAMAGE; TAOX; HARDNESS;
D O I：
10.1186/1556-276X-9-452
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The total ionizing dose (TID) effects of Co-60 gamma ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO (x) /Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance, resistance at high resistance state (HRS), and forming voltage were significantly impacted after radiation due to the radiation-induced holes. A novel hybrid filament model is proposed to explain the radiation effects, presuming that holes are co-operated with Ag ions to build filaments. In addition, the thermal coefficients of the resistivity in LRS can support this hybrid filament model. The Ag/AlO (x) /Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are highly suitable for radiation-hard electronics applications.
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页数：6
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