Quantum criticality of excitonic Mott metal-insulator transitions in black phosphorus

被引:6
|
作者
Zheng, Binjie [1 ]
Wang, Junzhuan [1 ]
Wang, Qianghua [2 ]
Su, Xin [1 ]
Huang, Tianye [1 ]
Li, Songlin [1 ]
Wang, Fengqiu [1 ]
Shi, Yi [1 ]
Wang, Xiaomu [1 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Sch Phys, Nanjing 210093, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
ELECTRON-HOLE LIQUID; TEMPERATURE; CROSSOVER;
D O I
10.1038/s41467-022-35567-w
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Quantum phase transition refers to the abrupt change of ground states of many-body systems driven by quantum fluctuations. It hosts various intriguing exotic states around its quantum critical points approaching zero temperature. Here we report the spectroscopic and transport evidences of quantum critical phenomena of an exciton Mott metal-insulator-transition in black phosphorus. Continuously tuning the interplay of electron-hole pairs by photo-excitation and using Fourier-transform photo-current spectroscopy as a probe, we measure a comprehensive phase diagram of electron-hole states in temperature and electron-hole pair density parameter space. We characterize an evolution from optical insulator with sharp excitonic transition to metallic electron-hole plasma phases featured by broad absorption and population inversion. We also observe strange metal behavior that resistivity is linear in temperature near the Mott transition boundaries. Our results exemplify an ideal platform to investigating strongly-correlated physics in semiconductors, such as crossover between superconductivity and superfluity of exciton condensation. The exciton Mott transition refers to a transition from an insulating state of gas-like excitons to strongly correlated electron-hole plasma phases in photoexcited semiconductors. Here the authors experimentally study such a transition in black phosphorus and reveal its quantum critical properties.
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页数:7
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