Current Transport Properties of Monolayer Graphene/n-Si Schottky Diodes

被引：11
|
作者：
Pathak, C. S. [1 ]
Garg, Manjari [1 ]
Singh, J. P. [1 ]
Singh, R. [1 ]
机构：
[1] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2018年 / 33卷 / 05期
关键词：
electrical; nanoscale; graphene; KPFM; CAFM; BARRIER INHOMOGENEITIES; EMISSION;
D O I：
10.1088/1361-6641/aab8a6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present work reports on the fabrication and the detailed macroscopic and nanoscale electrical characteristics of monolayer graphene/n-Si Schottky diodes. The temperature dependent electrical transport properties of monolayer graphene/n-Si Schottky diodes were investigated. Nanoscale electrical characterizations were carried out using Kelvin probe force microscopy and conducting atomic force microscopy. Most the values of ideality factor and barrier height are found to be in the range of 2.0-4.4 and 0.50-0.70 eV for monolayer graphene/n-Si nanoscale Schottky contacts. The tunneling of electrons is found to be responsible for the high value of ideality factor for nanoscale Schottky contacts.
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页数：8
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