Electronic structure and morphology of epitaxial Bi2Te2Se topological insulator films

被引：14

作者：

Maass, H. ^{[1
]}

Schreyeck, S. ^{[1
]}

Schatz, S. ^{[1
]}

Fiedler, S. ^{[1
]}

Seibel, C. ^{[1
]}

Lutz, P. ^{[1
]}

Karczewski, G. ^{[1
,2
]}

Bentmann, H. ^{[1
]}

Gould, C. ^{[1
]}

Brunner, K. ^{[1
]}

Molenkamp, L. W. ^{[1
]}

Reinert, F. ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 19期

关键词：

SINGLE DIRAC CONE; SURFACE; BI2SE3;

D O I：

10.1063/1.4902010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial films of the ternary topological insulator Bi2Te2Se were grown on Si(111) substrates and investigated for their surface electronic properties and morphology. We employ a Se-capping procedure allowing for the preparation of clean films in the surface-analysis experimental setups. Using angle-resolved photoelectron spectroscopy, we determine the dispersion of the topological surface state. With time after surface preparation, the spectroscopic features in the surface electronic structure exhibit significant temperature-dependent shifts to higher binding energies. Scanning tunneling microscopy images show terraces with typical step edge separations of 50 nm-150 nm. X-ray photoelectron spectroscopy indicates an increased Se concentration at the surface. (C) 2014 AIP Publishing LLC.

引用

页数：4

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