Diode side-pumped actively Q-switched Nd:YAG/SrWO4 Raman laser with high average output power of over 10 W at 1180

被引：34
|
作者：
Chen, X. H. [1 ]
Zhang, X. Y. [1 ]
Wang, Q. P. [1 ]
Li, P. [1 ]
Li, S. T. [1 ]
Cong, Z. H. [1 ]
Liu, Z. J. [1 ]
Fan, S. Z. [1 ]
Zhang, H. J. [2 ]
机构：
[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
LASER PHYSICS LETTERS | 2009年 / 6卷 / 05期
基金：
美国国家科学基金会;
关键词：
diode-pumped lasers; Raman lasers; Q-switching; SOLID-STATE; MICROCHIP LASER; ND; EFFICIENT; SCATTERING; CRYSTALS; TUNGSTATE; ND-SRWO4;
D O I：
10.1002/lapl.200810142
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A diode-side-pumped actively Q-switched Nd:YAG/SrWO4 intracavity Raman laser has been demonstrated, in which a Nd:YAG module is used as the fundamental laser source and a SrWO4 crystal is used as the Raman active medium to generate first-Stokes laser at 1180 nm. A convex-plane cavity is employed to make the laser in a stable and efficient work under high pump power. At a LD pump power of 164 W and a pulse repetition frequency of 20 kHz, an average output power of 10.5 W at 1180 nm is obtained.
引用
收藏
页码：363 / 366
页数：4
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