Comment on "Optical characterization of CuIn1-xGaxSe2 alloy thin films by spectroscopic ellipsometry" [J. Appl. Phys. 94, 879 (2003)]

被引：0

作者：

Han, Sung-Ho ^{[1
]}

Levi, Dean ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 09期

关键词：

D O I：

10.1063/1.2374223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method to determine the optical functions of thin-film CuIn1-xGaxSe2 alloys was provided in the paper "Optical characterization of CuIn1-xGaxSe2 alloy thin films by spectroscopic ellipsometry." The optical functions were obtained and the effect of Ga content on the electronic transitions of CuIn1-xGaxSe2 was discussed. We indicate the mistake of their method in determining the critical point energies and discuss the reason for using standard analytic line shape, epsilon(omega)=C-Ae(i phi)(omega-E+i Gamma)(n), in this comment. (c) 2006 American Institute of Physics.

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页数：2

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