AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation

被引：0

作者：

Olivier, Aurelien ^{[1
]}

Gehin, Thomas ^{[1
]}

Desplanque, Ludovic ^{[1
]}

Wallart, Xavier ^{[1
]}

Roelens, Yannick ^{[1
]}

Dambrine, Gilles ^{[1
]}

Cappy, Alain ^{[1
]}

Bollaert, Sylvain ^{[1
]}

Lefebvre, Eric ^{[2
]}

Malmkvist, Mikael ^{[2
]}

Grahn, Jan ^{[2
]}

机构：

[1] IEMN, Ave Poincare, F-59652 Villeneuve Dascq, France

[2] Chalmers, Dept Microtechnol & Nanosci MC2, Microwave Electron Lab, Gothenburg, Sweden

来源：

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年

关键词：

HEMT; AlSb/InAs; dry etching; wet etching; ICP;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present experimental results on AlSb/InAs HEMTs with deep and shallow mesa using wet and dry etching techniques respectively. Similar electrical results have been obtained using both techniques.

引用

页码：316 / +

页数：2

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