Process optimisation of MOVPE growth by numerical modelling of transport phenomena including thermal radiation

A global transport model for the MOVPE of III-V growth based on the finite volume solution of coupled flow, heat and mass transfer, including detailed radiative transfer, multicomponent diffusion and homogeneous and heterogeneous chemical reactions, is presented. For radiative transfer modelling, a combined approach is used of grey-diffuse view-factor based heat flux exchange between the semi-transparent reactor walls through the transparent reactor interior, and a spherical harmonics approximation for the radiative-conductive heat transfer problem in participating massive quartz elements with complex shapes. The described modelling approach is applied to the horizontal multiwafer radial how Planetary Reactor(TM), validated experimentally and used for process improvements, The mutual interaction of changing radiation properties at internal solid boundaries due to semiconductor coatings and thermal behaviour in that particular MOVPE reactor is discussed.