1600 V, 5.1 mΩ.cm2 4H-SiC BJT with a High Current Gain of β=70

This paper reports a newly achieved best result on the common emitter current gain of 4H-SiC high power bipolar junction transistors (BJTs). A fabricated 1600 V - 15 A 4H-SiC power BJT with an active area of 1.7 mm(2) shows a high DC current gain (beta) of 70, when it conducts 9.8 A collector current at a base current of only 140 mA. The maximum AC current gain (Delta I-C/Delta I-B) is up to 78. This high performance BJT has an open base collector-to-emitter blocking voltage (V-CEO) of over 1674 V with a leakage current of 1.6 mu A and a specific on-resistance (RSP-ON) of 5.1 m Omega.cm(2) when it conducts 7.0 A (412 A/cm(2)) at a forward voltage drop of V-CE = 2.1 V. A large area 4H-SiC BJT with a footprint of 4.1 mm x 4.1 mm has also shown a DC current gain over 50. These high-gain, high-voltage and high-current 4H-SiC BJTs further support a promising future for 4H-SiC BJT applications.