Effect of Residual TiN on Reliability of Au Wire Bonds during High Temperature Storage

被引：0

作者：

McGlone, J. M. ^{[1
]}

Brizar, G. ^{[2
]}

Vanderstraeten, D. ^{[2
]}

Iyer, D. ^{[3
]}

Hose, S. ^{[1
]}

Gambino, J. P. ^{[1
]}

机构：

[1] ON Semicond, Gresham, OR USA

[2] ON Semicond, Oudenaarde, Belgium

[3] ON Semicond, Phoenix, AZ USA

来源：

2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2020年

关键词：

High temperature storage; gold wire bond reliability; Titanium nitride; surface contamination; aluminum;

D O I：

10.1109/irps45951.2020.9128891

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is well-known that residual TiN on Al bond pads is detrimental to wire bond reliability. However, the exact reliability impact has not been reported. In this work, we characterize the effect of residual TiN on Au wire bond reliability during high temperature storage at 210 degrees C (i.e., a high temperature stress required for automotive qualification). We observe no degradation in wire bond pull and shear strength for bond pads with residual TiN prior to high temperature storage. In addition, after high temperature storage, there is no difference in the measured wire bond resistance for bond pads with vs without residual TiN. However, the pull strength is clearly reduced for bond pads with residual TiN. These results show that the effect of residual TiN on wire bond reliability may not be evident at time zero testing, but is only evident after a reliability stress.

引用

页数：5

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