Electrical and optical properties of aluminium doped zinc oxide transparent conducting oxide films prepared by dip coating technique

被引:8
|
作者
Manjakkal, Libu [1 ]
Selvam, I. Packia [1 ]
Potty, S. N. [1 ]
Shinde, R. S. [2 ]
机构
[1] C MET, Trichur, India
[2] Raja Ramanna Ctr Adv Technol, Indore, Madhya Pradesh, India
关键词
Semiconductor technology; Thick/thin film technology; Transparent conducting oxides; ZNO THIN-FILMS; PULSED-LASER DEPOSITION; LIGHT-EMITTING DEVICES; SOL-GEL METHOD; BAND-GAP; AL FILMS; SPRAY; ELECTRODE;
D O I
10.1108/MI-06-2015-0058
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Purpose - Aluminium-doped zinc oxide thin films exhibit interesting optoelectronic properties, which make them suitable for fabrication of photovoltaic cell, flat panel display electrode, etc. It has been shown that aluminium dopant concentration and annealing treatment in reduced atmosphere are the major factors affecting the electrical and optical properties of aluminium doped zinc oxide (AZO) film. Here, the authors report the structural, optical and electrical properties of aluminium-doped zinc oxide thin films fabricated by dip coating technique and annealed in air atmosphere, thereby avoiding hazardous environments such as hydrogen. The aim of this paper was to systematically investigate the effect of annealing temperature on the electrical properties of dip-coated film. Design/methodology/approach - Aluminium-doped ZnO thin films were prepared on corning substrates by dip coating method. Aluminium concentration in the film varied from 0.8 to 1.4 mol per cent. Films have been characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, UV-visible spectroscopy and Hall measurements. The deposited films were heat treated at 450-600 degrees C, in steps of 50 degrees C for 1 h in air to study the improvement in electrical properties. Films were also prepared by annealing at 600 degrees C in air for durations of 1, 2, 4 and 6 h. Envelope method was used to calculate the variation of the refractive index and extinction coefficient with wavelength. Findings - The electrical resistivity is found to decrease considerably when the annealing time is increased from 1 to 4 h. The films exhibited high transmittance (> 90 per cent) in the visible range, and the optical band gaps were found to change as per the Moss-Burstien effect, and this was consistent with the observed changes in the carrier concentration. Originality/value - The study shows the effect of annealing in air, avoiding hazardous reduced environment, such as hydrogen, to study the improvement in electrical and optical properties of aluminum-doped zinc oxide films. Envelope method was used to calculate the variation of optical constants with wavelength.
引用
收藏
页码:1 / 8
页数:8
相关论文
共 50 条
  • [31] Physical properties of transparent and conducting sprayed fluorine doped zinc oxide thin films
    Shinde, S. S.
    Shinde, P. S.
    Pawar, S. M.
    Moholkar, A. V.
    Bhosale, C. H.
    Rajpure, K. Y.
    SOLID STATE SCIENCES, 2008, 10 (09) : 1209 - 1214
  • [32] Optical, Structural and Electrical Properties of Aluminum Doped Zinc Oxide Thin Films by MOCVD Technique
    Ayinde, S. A.
    Fasakin, O.
    Olofinjana, B.
    Adedeji, A. V.
    Oyedare, P. O.
    Eleruja, M. A.
    Ajayi, E. O. B.
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (06) : 3655 - 3661
  • [33] Optical, Structural and Electrical Properties of Aluminum Doped Zinc Oxide Thin Films by MOCVD Technique
    S. A. Ayinde
    O. Fasakin
    B. Olofinjana
    A. V. Adedeji
    P. O. Oyedare
    M. A. Eleruja
    E. O. B. Ajayi
    Journal of Electronic Materials, 2019, 48 : 3655 - 3661
  • [34] TRANSPARENT CONDUCTING OXIDE SYNTHESIS OF ALUMINIUM DOPED ZINC OXIDES BY CHEMICAL COPRECIPITATION
    Maioco, Silvia
    Vera, Claudia
    Rajchenberg, Natan
    Aragon, Ricardo
    AVANCES EN CIENCIAS E INGENIERIA, 2013, 4 (04): : 7 - 13
  • [35] Optical and electrical properties of tin-doped indium oxide transparent conducting films deposited by magnetron sputtering
    Zhong, Z.-Y. (zyzhongzy@163.com), 1600, Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China (42):
  • [36] Electrical and optical properties of zinc oxide thin films and heavily aluminum-doped zinc oxide thin films prepared by molecular beam epitaxy
    Ohgaki, T
    Kawamura, Y
    Ohashi, N
    Kakemoto, H
    Wada, S
    Adachi, Y
    Haneda, H
    Tsurumi, T
    PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2003, 744 : 163 - 168
  • [37] Structural and optical properties of transparent conducting oxide Cd1-xCrxO thin films prepared by the sol-gel dip-coating method
    Hasaneen, M. F.
    Shalaby, M. S.
    Yousif, N. M.
    Diab, A. K.
    El Agammy, E. F.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2022, 280
  • [38] Preparation and Investigation of Transparent Conducting Aluminium-doped Zinc Oxide Films Prepared by Sol-gel Method for Sensor Application
    Singh, Prabhjot
    Singh, Suldunander
    Kaur, Jasmeet
    Yogi, Sonia
    Vidhani, Bhavna
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2022, 60 (06) : 529 - 538
  • [39] Transparent conducting zinc oxide thin films doped with aluminum and molybdenum
    Duenow, Joel N.
    Gessert, Timothy A.
    Wood, David M.
    Barnes, Teresa M.
    Young, Matthew
    To, Bobby
    Coutts, Timothy J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (04): : 955 - 960
  • [40] Electrical and Optical Properties of Molybdenum Doped Zinc Oxide Films Prepared by Reactive RF Magnetron Sputtering
    Reddy, R. Subba
    Sreedhar, A.
    Uthanna, S.
    ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2015), 2015, 1675