Quantitative study of charge-to-breakdown of thin gate oxide for a p(+)-poly-Si metal oxide semiconductor capacitor (vol 144, pg 698, 1997)

被引：0

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作者：

Wang, LS

Huang, FS

Lin, MS

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 05期

关键词：

D O I：

10.1149/1.1837698

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1890 / 1890

页数：1

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