Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots.

被引：0

作者：

Mintairov, AM ^{[1
]}

Blagnov, PA ^{[1
]}

Kovalenkov, OV ^{[1
]}

Li, C ^{[1
]}

Merz, JL ^{[1
]}

Oktyabrsky, S ^{[1
]}

Tokranov, V ^{[1
]}

Vlasov, AS ^{[1
]}

Vinokurov, DA ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS | 2002年 / 722卷

关键词：

D O I：

暂无

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

We have studied high-energy shifts of single quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip. "Pressure" coefficients of 0.65-3 meV/nm have been measured for self-organized InAs/GaAs, InAs/AlAs and InP/GaInP QDs in agreement with numerical calculations of the local strain field. We found an increase of the tip-induced pressure with increasing aperture diameter from 50-300 nm. A correlation between the shift rate and QD stiffness was obtained. We also observed an order of magnitude increase of single QD emission intensity with increased pressure.

引用

页码：319 / 324

页数：6

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