Mechanical interaction in near-field spectroscopy of single semiconductor quantum dots.

被引：0
|
作者：
Mintairov, AM [1 ]
Blagnov, PA [1 ]
Kovalenkov, OV [1 ]
Li, C [1 ]
Merz, JL [1 ]
Oktyabrsky, S [1 ]
Tokranov, V [1 ]
Vlasov, AS [1 ]
Vinokurov, DA [1 ]
机构：
[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
来源：
MATERIALS AND DEVICES FOR OPTOELECTRONICS AND MICROPHOTONICS | 2002年 / 722卷
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TB33 [复合材料];
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摘要：
We have studied high-energy shifts of single quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip. "Pressure" coefficients of 0.65-3 meV/nm have been measured for self-organized InAs/GaAs, InAs/AlAs and InP/GaInP QDs in agreement with numerical calculations of the local strain field. We found an increase of the tip-induced pressure with increasing aperture diameter from 50-300 nm. A correlation between the shift rate and QD stiffness was obtained. We also observed an order of magnitude increase of single QD emission intensity with increased pressure.
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页码：319 / 324
页数：6
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