Charging effects on reliability of HfO2 devices with polysilicon gate electrode

被引：15

作者：

Onishi, K ^{[1
]}

Kang, CS ^{[1
]}

Choi, R ^{[1
]}

Cho, HJ ^{[1
]}

Gopalan, S ^{[1
]}

Nieh, R ^{[1
]}

Krishnan, S ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelectron Res Ctr, Austin, TX 78758 USA

来源：

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年

关键词：

D O I：

10.1109/RELPHY.2002.996675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time dependent dielectric breakdown and bias temperature instability of HfO2 devices with polysilicon gate electrode have been studied. Both N and PMOS capacitors have sufficient TDDB lifetime, whereas PMOS capacitors show gradual increase in the leakage current during stress. HfO2 PMOSFET's without nitridation have sufficient immunity against negative bias temperature instability. Bias temperature instability for NMOS can be a potential scaling limit for HfO2.

引用

页码：419 / 420

页数：2

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