Heavily Fe-doped ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy

被引:24
|
作者
Nguyen Thanh Tu [1 ,2 ]
Pham Nam Hai [3 ,4 ]
Le Duc Anh [1 ,5 ]
Tanaka, Masaaki [1 ,4 ]
机构
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[2] Ho Chi Minh City Univ Educ, Dept Phys, 280 An Duong Vuong St,Dist 5, Ho Chi Minh City 748242, Vietnam
[3] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1520033, Japan
[4] Univ Tokyo, CSRN, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[5] Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
关键词
GAAS;
D O I
10.7567/1882-0786/ab3f4b
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (FMS) (In1-x, Fe-x)sb (x = 20%-35%) thin films grown by low temperature MBE. The Curie temperature (T-c) of (In1-x, Fe-x)Sb reaches 385 K at x= 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based FMSs. Moreover, large coercive force (H-c = 160 Oe) and large remanent magnetization (M-r/M-s = 71%) have been observed at low temperature (10 K) for an (In1-x, Fe-x)Sb thin film with x = 35%, indicating that the FMS (In1-x, Fe-x)Sb is very promising for spintronics devices. (C) 2019 The Japan Society of Applied Physics
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页数:5
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