Heavily Fe-doped ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature and large magnetic anisotropy

被引：24

作者：

Nguyen Thanh Tu ^{[1
,2
]}

Pham Nam Hai ^{[3
,4
]}

Le Duc Anh ^{[1
,5
]}

Tanaka, Masaaki ^{[1
,4
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

[2] Ho Chi Minh City Univ Educ, Dept Phys, 280 An Duong Vuong St,Dist 5, Ho Chi Minh City 748242, Vietnam

[3] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, 2-12-1 Ookayama, Tokyo 1520033, Japan

[4] Univ Tokyo, CSRN, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

[5] Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 10期

关键词：

GAAS;

D O I：

10.7567/1882-0786/ab3f4b

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (FMS) (In1-x, Fe-x)sb (x = 20%-35%) thin films grown by low temperature MBE. The Curie temperature (T-c) of (In1-x, Fe-x)Sb reaches 385 K at x= 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based FMSs. Moreover, large coercive force (H-c = 160 Oe) and large remanent magnetization (M-r/M-s = 71%) have been observed at low temperature (10 K) for an (In1-x, Fe-x)Sb thin film with x = 35%, indicating that the FMS (In1-x, Fe-x)Sb is very promising for spintronics devices. (C) 2019 The Japan Society of Applied Physics

引用

页数：5

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