Effect of Magnetostatic Interactions between the Spin-Torque Oscillator and the SPT Writer on the Oscillation Characteristics of the Spin-Torque Oscillator
被引:6
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作者:
Asaka, Sota
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机构:
Kogakuin Univ, Tokyo 1638677, JapanKogakuin Univ, Tokyo 1638677, Japan
Asaka, Sota
[1
]
Hashimoto, Takuya
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机构:
Kogakuin Univ, Tokyo 1638677, JapanKogakuin Univ, Tokyo 1638677, Japan
Hashimoto, Takuya
[1
]
Yoshida, Kazuetsu
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机构:
Kogakuin Univ, Tokyo 1638677, JapanKogakuin Univ, Tokyo 1638677, Japan
Yoshida, Kazuetsu
[1
]
论文数: 引用数:
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机构:
Kanai, Yasushi
[2
]
机构:
[1] Kogakuin Univ, Tokyo 1638677, Japan
[2] Niigata Inst Technol, Kashiwazaki 9451195, Japan
microwave-assisted magnetic recording;
micromagnetic simulation;
D O I:
10.1587/transele.E96.C.1484
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Microwave-assisted magnetic recording (MAMR) has been proposed as a candidate technology to realize areal recording densities of over 2 Tbit/inch(2). MAMR requires a spin-torque oscillator (STO) to generate a strong high-frequency magnetic field that will induce magnetic resonance in the recording medium. The oscillation characteristics of STOs were previously investigated using a micromagnetic model that neglected the magnetic interaction among the STO, the single-pole-type (SPT) writer, and the recording head. The STO is typically placed in the gap between the main pole and the trailing shield of the SPT writer, so that the STO is inevitably subjected to strong magnetic interaction with the main pole and the trailing shield. We have developed a new simulator, referred to as an integrated MAMR simulator, that takes this interaction into account. The integrated simulator has revealed that the magnetic interaction has a strong influence on the oscillation characteristics.
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaRoyal Inst Technol, Dept Microelectron & Appl Phys, S-16440 Kista, Sweden
Shin, Franklin G.
Guan, Bo
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机构:
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaRoyal Inst Technol, Dept Microelectron & Appl Phys, S-16440 Kista, Sweden
Guan, Bo
Akerman, Johan
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机构:
Royal Inst Technol, Dept Microelectron & Appl Phys, S-16440 Kista, Sweden
Gothenburg Univ, Dept Phys, S-41296 Gothenburg, SwedenRoyal Inst Technol, Dept Microelectron & Appl Phys, S-16440 Kista, Sweden
机构:
Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France
CNRS, UMR 8622, F-91405 Orsay, FranceUniv Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France