Quantum size effect on Shubnikov-de Haas oscillations in 100 nm diameter single-crystalline bismuth nanowire

被引：23
|
作者：
Kim, Jeongmin [1 ]
Kim, Dohun [2 ]
Chang, Taehoo [1 ]
Lee, Wooyoung [1 ]
机构：
[1] Yonsei Univ, Dept Mat Sci & Engn, Shinchon 120749, South Korea
[2] Univ Maryland, Dept Phys, College Pk, MD 20742 USA
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 12期
基金：
新加坡国家研究基金会;
关键词：
ON-FILM FORMATION; THERMOELECTRIC FIGURE; TRANSPORT-PROPERTIES; BI NANOWIRES; ARRAYS; SURFACE; MERIT;
D O I：
10.1063/1.4896543
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Quantum size effect (QSE) in Bi nanowire is theoretically predicted to decrease band overlap energy resulting in semimetal-to-semiconductor transition. However, this effect has been rarely demonstrated on transport properties because of carrier-surface scattering and charge carriers induced from surface states of Bi. We report QSE on Shubnikov-de Haas (SdH) oscillations in a single-crystalline Bi nanowire with a diameter of 100 nm. The variation of intrinsic properties estimated using SdH oscillations indicates that the subband energy shift due to QSE. The enhanced effective mass of the electrons is consistent with the theoretical prediction pertaining to strong electron-hole coupling of Bi. (C) 2014 AIP Publishing LLC.
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页数：5
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